STP80NF10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 15 mOhms


Application

 HIGH-EFFICIENCY DC-AC CONVERTERS
 UPS AND MOTOR CONTROL


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	100	V
VDGR	Drain- gate Voltage(RGS = 20 k)	100	V
VGS	Gate-source Voltage	±20	V
ID	Drain Current (continuous) at Tc = 25	80	A
ID	Drain Current (continuous) at Tc = 100	80 (*)	A
IDM(•)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at Tc = 25	300	W
	Derating Factor	2	W/
dv/dt (1)	Peak Diode Recovery voltage slope	7	V/ns
EAS (2)	Single Pulse Avalanche Energy	200	mJ
Tstg	Storage Temperature	-55 to 175
Tj	Max. Operating Junction Temperature	175

Description

This MOSFET STP80NF10 series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

Parameters:

Technical/Catalog Information	STP80NF10
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	15 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	5500pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	182nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP80NF10 STP80NF10 497 2642 5 ND 49726425ND 497-2642-5