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STP8NM60N

MOSFET 600V, 7A Pwr MOSFET

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SeekIC No. : 00163399 Detail

STP8NM60N: MOSFET 600V, 7A Pwr MOSFET

STP8NM60N Data Sheet

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Part Number:
STP8NM60N
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 0.65 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 7 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.65 Ohms


Features:

· 100% avalanche tested
· Low input capacitance and gate charge
· Low gate input resistance


Application

·Switching applications


Specifications

Symbol
 Parameter
Value
Unit
TO-220
DPAK/IPAK
TO-220FP
VDS
 Drain-source voltage (VGS=0)
600
V
VGS
 Gate-source voltage
± 25
V
ID
 Drain current (continuous) at TC = 25
7
7(1)
A
ID
 Drain current (continuous) at TC = 100
4.3
4.3(1)
A
IDM(2)
 Drain current (pulsed)
28
28(1)
A
PTOT
 Total dissipation at TC = 25
70
25
A
dv/dt (3)
 Peak diode recovery voltage slope
15
V/ns
Tj,Tstg
Operating junction temperature Storage temperature
-55 to 150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 7A, di/dt 400A/s, VDD = 80% V(BR)DSS



Description

This series of devices STP8NM60N implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.




Parameters:

Technical/Catalog InformationSTP8NM60N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs650 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds 560pF @ 50V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs19nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP8NM60N
STP8NM60N
497 7533 5 ND
49775335ND
497-7533-5



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