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Part Number: STP8NM60N

 

 

 

 

Description: This series of devices implements second generation MDmesh™ technology. This revolutionary Power...


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STP8NM60N General Description


This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STP8NM60N Maximum Ratings

Symbol
 Parameter
Value
Unit
TO-220
DPAK/IPAK
TO-220FP
VDS
 Drain-source voltage (VGS=0)
600
V
VGS
 Gate-source voltage
± 25
V
ID
 Drain current (continuous) at TC = 25
7
7(1)
A
ID
 Drain current (continuous) at TC = 100
4.3
4.3(1)
A
IDM(2)
 Drain current (pulsed)
28
28(1)
A
PTOT
 Total dissipation at TC = 25
70
25
A
dv/dt (3)
 Peak diode recovery voltage slope
15
V/ns
Tj,Tstg
Operating junction temperature Storage temperature
-55 to 150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 7A, di/dt 400A/s, VDD = 80% V(BR)DSS

STP8NM60N Features

· 100% avalanche tested
· Low input capacitance and gate charge
· Low gate input resistance

STP8NM60N Typical Application

·Switching applications

STP8NM60N datasheet

STP04CM596B1R
PDF/DataSheet Download

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Related Part Number

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