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STPR810DB

Features: ·Glass passivated chip·Superfast switching time for high efficiency·Low forward voltage drop and high current capability·Low reverse leakage current·High surge capacity·Plastic package has UL flammability classification 94V-0Specifications Characteristic Symbol STPR805DB ...

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SeekIC No. : 004508587 Detail

STPR810DB: Features: ·Glass passivated chip·Superfast switching time for high efficiency·Low forward voltage drop and high current capability·Low reverse leakage current·High surge capacity·Plastic package has...

STPR810DB Data Sheet

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Part Number:
STPR810DB
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

·Glass passivated chip
·Superfast switching time for high efficiency
·Low forward voltage drop and high current capability
·Low reverse leakage current
·High surge capacity
·Plastic package has UL flammability classification 94V-0


Specifications

Characteristic
Symbol
STPR805DB
STPR810DB
STPR815DB
STPR820DB
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
200
V
Maximum RMS Voltage
VRWM
35
70
105
140
 V
Maximum DC Blocking Voltage
VDC
50
100
150
200
 V
Maximum Average Forward
Rectified Current)               @ TA = 60
IO
8
A
Peak Forward Surge Current
8.3ms single half-sine-wave
superimposed on rated load (JEDEC Metod)
IFSM
100
A
Maximum Forward @ TJ= 25
Voltage IF=8A    @ TJ= 25              
VFM
1.3
0.8
V
Maximum DC Reverse Current   @ TJ= 25
at Peak Reverse Voltage @ TJ= 25
IRM
10
150
A
Typical Junction
Capacitance (Note 1)
Cj
45
pF
Maximum Reverse Recovery Time (Note 2)
TRR
25
ns
Typical Thermal Resistance (Note 3)
RJA
3.0
/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
NOTES :1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A ,IRR 0.25A.
3.Thermal Resistance Junction to Case.


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