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STPR810D

Features: ·Glass passivated chip·Superfast switching time for high efficiency·Low forward voltage drop and high current capability·Low reverse leakage current·High surge capacity·Plastic package has UL flammability classification 94V-0Specifications Characteristic Symbol STPR810D S...

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SeekIC No. : 004508586 Detail

STPR810D: Features: ·Glass passivated chip·Superfast switching time for high efficiency·Low forward voltage drop and high current capability·Low reverse leakage current·High surge capacity·Plastic package has...

STPR810D Data Sheet

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Part Number:
STPR810D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

·Glass passivated chip
·Superfast switching time for high efficiency
·Low forward voltage drop and high current capability
·Low reverse leakage current
·High surge capacity
·Plastic package has UL flammability classification 94V-0


Specifications

Characteristic
Symbol
STPR810D
STPR820D
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
100
200
Volts
Maximum RMS Voltage
VRWM
70
140
Volts
Maximum DC Blocking Voltage
VDC
100
200
Volts
Maximum Average Forward
Rectified Current @TC=120
I(AV)
8.0
mAmps
Non Repetitive Peak Forward TP=10ms
Surge Current Per Diode
Sinusoidal (JEDEC Method) TP=8.3ms
IFSM
80
90
Amps
Maximum forward Voltage IF=8A @TJ =125
Pulse Width =300us IF=16A @TJ =125
Duty cycle       IF=16A @TJ =25
VF
0.99
1.20
1.25
Volts
Maximum DC Reverse Current  @ TJ= 25
at rated DC blocking voltage @ TJ= 100
IR
50
600
A
Typical Junction Capacitance (Note 1)
CJ
80
Maximum reverse recovery time (Note 2)
TRR
30
ns
Typical junction capacitance
Cj
30
pF
Operating and storage temperature range
Tj, TSTG
-55to +150
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
              2.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR 0.25A.


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