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STQ1HNC60

ApplicationSWITCH MODE LOW POWER SUPPIES (SMPS)CFLSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0)at Tc = 100 600 V VDGR Drain- gate Voltage (RGS = 20 k)at Tc = 100 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current (continuous) at Tc...

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SeekIC No. : 004508661 Detail

STQ1HNC60: ApplicationSWITCH MODE LOW POWER SUPPIES (SMPS)CFLSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0)at Tc = 100 600 V VDGR Drain- gate Voltage (RGS = 20...

STQ1HNC60 Data Sheet

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Part Number:
STQ1HNC60
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

SWITCH MODE LOW POWER SUPPIES (SMPS)
CFL


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0)at Tc = 100 600 V
VDGR Drain- gate Voltage (RGS = 20 k)at Tc = 100 600 V
VGS Gate-Source Voltage ± 30 V
ID Drain Current (continuous) at Tc = 25 0.4 A
ID
Drain Current (continuous) at Tc = 100 		0.25 A
IDM(`) Drain Current (pulsed) 1.6 A
Ptot Total Dissipation at Tc = 25 3.5 W
Derating Factor 0.028 W/
dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150
(`) Pulse width limited by safe operating area (1) ISD 14 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX


Description

Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics STQ1HNC60 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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