Purchase STQ1HNC60, In-stock STQ1HNC60 From SeekIC.
Part Number: STQ1HNC60
Description: Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanc...
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STQ1HNC60
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DataSheet
General Description
STQ1HNC60 General Description
Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STQ1HNC60 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0)at Tc = 100 | 600 | V |
| VDGR | Drain- gate Voltage (RGS = 20 k)at Tc = 100 | 600 | V |
| VGS | Gate-Source Voltage | ± 30 | V |
| ID | Drain Current (continuous) at Tc = 25 | 0.4 | A |
| ID | Drain Current (continuous) at Tc = 100 |
0.25 | A |
| IDM(`) | Drain Current (pulsed) | 1.6 | A |
| Ptot | Total Dissipation at Tc = 25 | 3.5 | W |
| Derating Factor | 0.028 | W/ | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 3.5 | V/ns |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
STQ1HNC60 Typical Application
SWITCH MODE LOW POWER SUPPIES (SMPS)
CFL
CFL
STQ1HNC60
PDF/DataSheet Download
- Datasheet: STQ1HNC60
- File Size: 119178 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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