MFG:ST Package Cooled:TO-92 D/C:04+
MFG: ST
Package Cooled: TO-92
D/C: 04+
Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter |
Value |
Unit | |
|
STD1NK60 STD1NK60-1 |
STQ1HNK60R | |||
| VDS | Collector-Source Voltage (VGS = 0 V) |
600 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | |
| VGS | Gate-Source Voltage |
±30 |
V | |
| ID | Drain Current (continuous) at TC = 25 |
1.0 |
0.4 |
A |
| ID | Drain Current (continuous) at TC = 100 |
0.63 |
0.25 |
A |
| IDM(`) | Drain Current (pulsed) |
4 |
1.6 |
A |
| PTOT | Total Dissipation at TC = 25 |
30 |
3 |
W |
| Derating Factor |
0.24 |
0.025 |
W/ | |
| dv/dt(1) | Peak Diode Recovery voltage slope |
3 |
V/ns | |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
||
` TYPICAL RDS(on) = 8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` NEW HIGH VOLTAGE BENCHMARK
STQ1HNK60R
PDF/DataSheet Download
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