STS17NF3LL

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms
Gate-Source Breakdown Voltage : +/- 18 V


Application

· DC-DC CONVERTERS FOR TELECOM AND NOTEBOOK CPU CORE
· SYNCHRONOUS RECTIFIER


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	12	A
ID	Drain Current (continuous) at Tc = 100	7.5	A
IDM(`)	Drain Current (pulsed)	48	A
PTOT	Total Dissipation at Tc = 25	2.5	W

(•)Pulse width limited by safe operating area


Description

This application specific Power MOSFET STS17NF3LL is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor STS17NF3LL shows the best trade-off between on-resistance and gate charge. Such features make it the best choice in high efficiency DC-DC converters for Telecom and computer industries.

Parameters:

Technical/Catalog Information	STS17NF3LL
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	5.5 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds	2160pF @ 25V
Power - Max	3.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	35nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS17NF3LL STS17NF3LL 497 3224 2 ND 49732242ND 497-3224-2