MOSFET N-channel MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 17 A | ||
Resistance Drain-Source RDS (on) : | 0.0057 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SO-8 | Packaging : | Reel |
Symbol | Parameter | Value | Unit |
VDS | Drain-source voltage (VGS = 0) | 30 | V |
VGS | Gate- source voltage | ± 16 | V |
ID (1) | Drain current (continuous) at TC = 25 | 17 | A |
ID | Drain current (continuous) at TC = 100 | 10.6 | A |
IDM (2) | Drain current (pulsed) | 68 | A |
Ptot(1) | Drain current (pulsed) | 2.7 | W |
Tstg | Storage temperature | -55 to 150 | |
Tj | Operating junction temperature |
This STS17NH3LL utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced.
Technical/Catalog Information | STS17NH3LL |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 17A |
Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 8.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1810pF @ 25V |
Power - Max | 2.7W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 24nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STS17NH3LL STS17NH3LL 497 5760 1 ND 49757601ND 497-5760-1 |