STS17NH3LL

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 17 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.0057 Ohms


Features:

· Optimal R_DS(on) x Qg trade-off @ 4.5 V
· Conduction losses reduced
· Improved junction-case thermal resistance
· Low threshold device


Application

· Switching application


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source voltage (VGS = 0)	30	V
VGS	Gate- source voltage	± 16	V
ID (1)	Drain current (continuous) at TC = 25	17	A
ID	Drain current (continuous) at TC = 100	10.6	A
IDM (2)	Drain current (pulsed)	68	A
Ptot(1)	Drain current (pulsed)	2.7	W
Tstg	Storage temperature	-55 to 150
Tj	Operating junction temperature

1.This value is rated according to Rthj-pcb
2.Pulse width limited by safe operating area


Description

This STS17NH3LL utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced.

Parameters:

Technical/Catalog Information	STS17NH3LL
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	5.7 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds	1810pF @ 25V
Power - Max	2.7W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	24nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS17NH3LL STS17NH3LL 497 5760 1 ND 49757601ND 497-5760-1