STS17NH3LL

MOSFET N-channel MOSFET

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SeekIC No. : 00160153 Detail

STS17NH3LL: MOSFET N-channel MOSFET

floor Price/Ceiling Price

Part Number:
STS17NH3LL
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.0057 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 17 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.0057 Ohms


Features:

· Optimal RDS(on) x Qg trade-off @ 4.5 V
· Conduction losses reduced
· Improved junction-case thermal resistance
· Low threshold device



Application

· Switching application


Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate- source voltage ± 16 V
ID (1) Drain current (continuous) at TC = 25 17 A
ID Drain current (continuous) at TC = 100 10.6 A
IDM (2) Drain current (pulsed) 68 A
Ptot(1) Drain current (pulsed) 2.7 W
Tstg Storage temperature -55 to 150
Tj Operating junction temperature

1.This value is rated according to Rthj-pcb

2.Pulse width limited by safe operating area


Description

This STS17NH3LL utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced.




Parameters:

Technical/Catalog InformationSTS17NH3LL
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs5.7 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds 1810pF @ 25V
Power - Max2.7W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs24nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STS17NH3LL
STS17NH3LL
497 5760 1 ND
49757601ND
497-5760-1



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