STS1DNC45

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Configuration : Dual Dual Drain
Continuous Drain Current : 0.4 A
Drain-Source Breakdown Voltage : 450 V
Resistance Drain-Source RDS (on) : 4.1 Ohms


Application

 SWITCH MODE LOW POWER SUPPLIES (SMPS)
DC-DC CONVERTERS
LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS)
LOW POWER BATTERY CHARGERS


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C	0.40 0.25	A A
IDM(`)	Drain Current (pulsed)	48	A
PTOT	Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation	1.6 2	W W
dv/dt (1)	Peak Diode Recovery voltage slope	3	V/ns

(•)Pulse width limited by safe operating area (1)ISD0.3A, di/dt £100A/µs, V_DD0V(BR)DSS, Tj0 TJMAX


Description

The SuperMESH™ series STS1DNC45 is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STS1DNC45
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	450V
Current - Continuous Drain (Id) @ 25° C	400mA
Rds On (Max) @ Id, Vgs	4.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	160pF @ 25V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS1DNC45 STS1DNC45