STS1HNK60

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Configuration : Single Quad Drain
Continuous Drain Current : 0.3 A
Resistance Drain-Source RDS (on) : 8.5 Ohms


Features:

` TYPICAL R<sub>DS</sub>(on) = 8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` NEW HIGH VOLTAGE BENCHMARK


Application

· SWITCH MODE LOW POWER SUPPLIES (SMPS)
· LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS)
· LOW POWER BATTERY CHARGERS


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	600	V
VDGR	Drain-gate Voltage (RGS = 20 k)	600	V
VGS	Gate- source Voltage	±30	V
ID	Drain Current (continuos) at TC = 25	0.3	A
ID	Drain Current (continuos) at TC = 100	0.19	A
IDM (`)	Drain Current (pulsed)	1.2	A
Ptot	Total Dissipation at TC = 25	2	W
	Derating Factor	0.016	W/
dv/dt (1)	Peak Diode Recovery voltage slope	3	V/ns
Tj Tstg	Operating Junction Temperature Storage Temperature	-65 to 150

(`) Pulse width limited by safe operating area.

(1) I_SD 0.3A, di/dt 100 µA, V_DD V_(BR)DSS, T_j T_JMAX.


Description

The SuperMESH™ series STS1HNK60 is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STS1HNK60
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	300mA
Rds On (Max) @ Id, Vgs	8.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	156pF @ 25V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STS1HNK60 STS1HNK60 497 3530 1 ND 49735301ND 497-3530-1