STS1NC60

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 15 Ohms
Continuous Drain Current : 0.3 A


Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	12	A
ID	Drain Current (continuous) at Tc = 100	7.5	A
IDM(`)	Drain Current (pulsed)	48	A
PTOT	Total Dissipation at Tc = 25	2.5	W
	Derating Factor	0.02	W/
dv/dt (1)	Peak Diode Recovery voltage slope	3	V/ns
Tstg	Storage Temperature	60 to 150
Tj	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area (1)ISD0.3A, di/dt £100A/µs, V_DD0V(BR)DSS, Tj0 TJMAX


Description

The PowerMESH™II STS1NC60 is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.