STS1NK60Z

MOSFET N-Ch 600 Volt 0.25A Zener SuperMESH

product image

STS1NK60Z Picture
SeekIC No. : 00159046 Detail

STS1NK60Z: MOSFET N-Ch 600 Volt 0.25A Zener SuperMESH

floor Price/Ceiling Price

US $ .14~.15 / Piece | Get Latest Price
Part Number:
STS1NK60Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • 2500~3700
  • 3700~5000
  • 5000~10000
  • Unit Price
  • $.15
  • $.15
  • $.15
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.25 A
Resistance Drain-Source RDS (on) : 15 Ohms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 15 Ohms
Continuous Drain Current : 0.25 A


Features:

` TYPICAL RDS(on) = 13
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED



Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 k)
600
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25
0.25
A
ID
Drain Current (continuos) at TC = 100
0.16
A
IDM (`)
Drain Current (pulsed)
1
A
Ptot
Total Dissipation at TC = 25
2
W
Derating Factor
0.016
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
800
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150



(`) Pulse width limited by safe operating area.

(1) ISD 0.3A, di/dt 200 µA, VDD V(BR)DSS, Tj TJMAX.


Description

The SuperMESH™ series STS1NK60Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTS1NK60Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C250mA
Rds On (Max) @ Id, Vgs15 Ohm @ 400mA, 10V
Input Capacitance (Ciss) @ Vds 94pF @ 25V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6.9nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STS1NK60Z
STS1NK60Z



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Transformers
Prototyping Products
DE1
Semiconductor Modules
Isolators
View more