STS1NK60Z

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 15 Ohms
Continuous Drain Current : 0.25 A


Features:

` TYPICAL R<sub>DS</sub>(on) = 13
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED


Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	600	V
VDGR	Drain-gate Voltage (RGS = 20 k)	600	V
VGS	Gate- source Voltage	±30	V
ID	Drain Current (continuos) at TC = 25	0.25	A
ID	Drain Current (continuos) at TC = 100	0.16	A
IDM (`)	Drain Current (pulsed)	1	A
Ptot	Total Dissipation at TC = 25	2	W
	Derating Factor	0.016	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	800	V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150

(`) Pulse width limited by safe operating area.

(1) I_SD 0.3A, di/dt 200 µA, V_DD V_(BR)DSS, T_j T_JMAX.


Description

The SuperMESH™ series STS1NK60Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STS1NK60Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	250mA
Rds On (Max) @ Id, Vgs	15 Ohm @ 400mA, 10V
Input Capacitance (Ciss) @ Vds	94pF @ 25V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6.9nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS1NK60Z STS1NK60Z