STS25NH3LL

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.0032 Ohms
Gate-Source Breakdown Voltage : +/- 18 V


Application

· DC-DC CONVERTERS FOR TELECOM AND NOTEBOOK CPU CORE
· SYNCHRONOUS RECTIFIER


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 18	V
ID	Drain Current (continuous) at Tc = 25	25	A
ID	Drain Current (continuous) at Tc = 100	18	A
IDM(`)	Drain Current (pulsed)	100	A
EAS (1)	Single Pulse Avalanche Energy	200	mJ
PTOT	Total Dissipation at Tc = 25	3.2	W

(•)Pulse width limited by safe operating area         (1) Starting Tj = 25  ID = 12.5A V_DD = 30V


Description

The STS25NH3LL utilizes the latest advanced design rules of ST's propetary STripFET™ technology. This novel 0.6m process coupled to unique metalization techniques re alizes the most advanced low voltage MOSFET in SO-8 ever produced. It is therefore suit able for the most demanding DC-DC converter applications where high efficiency is to be achived at high output current.

Parameters:

Technical/Catalog Information	STS25NH3LL
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	3.5 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds	4450pF @ 25V
Power - Max	3.2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	40nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS25NH3LL STS25NH3LL 497 2474 6 ND 49724746ND 497-2474-6