Features: ·Super high dense cell design for low R DS (ON).·Rugged and reliable.·TS OP 6 package.PinoutSpecifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 20 V Gate-S ource Voltage VGS ± 10 V Drain Current-Continuous a@ Tc=25 -Pulsed...
STS2622: Features: ·Super high dense cell design for low R DS (ON).·Rugged and reliable.·TS OP 6 package.PinoutSpecifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS ...
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Features: · Optimal RDS(on) x Qg trade-off @ 4.5V· Reduced switching losses· Reduced conduction lo...
·Super high dense cell design for low R DS (ON).
·Rugged and reliable.
·TS OP 6 package.

|
Parameter |
Symbol |
Limit |
Unit |
|
Drain-S ource Voltage |
VDS |
20 |
V |
|
Gate-S ource Voltage |
VGS |
± 10 |
V |
|
Drain Current-Continuous a@ Tc=25 -Pulsedb |
ID |
2.5 |
A |
|
IDM |
8 |
A | |
|
Drain-S ource Diode Forward Current a |
IS |
1.25 |
A |
|
Maximum Power Dissipation a |
PD |
1 |
W |
|
Operating Junction and S torage Temperature R ange |
TJ , TS TG |
-55 to 150 |