STS2DNF30L

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.09 Ohms
Continuous Drain Current : 3 A
Gate-Source Breakdown Voltage : +/- 18 V


Application

· DC MOTOR DRIVE
·  DC-DC CONVERTERS
· BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
· POWER MANAGEMENT IN PORTABLE/DESKTOP PCs


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 18 V	V
ID	Drain Current (continuos) at TC = 25°C Single Operating	3	A
ID	Drain Current (continuos) at TC = 100°C Single Operating	1.9	A
IDM(`)	Drain Current (pulsed)	9	A
PTOT	Total Dissipation at TC = 25°C Dual Operating Total Dissipation at TC = 25°C Single Operating	1.6 2	W W
Tstg	Storage Temperature	55 to 150
Tj	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area


Description

This Power MOSFET STS2DNF30L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment  steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STS2DNF30L
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	110 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	121pF @ 25V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.5nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS2DNF30L STS2DNF30L