STS2DPFS20V

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 2.5 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.2 Ohms


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	GS = 0)	20	V
VDGR	Drain-gate Voltage(RGS = 20 kW)	20	V
VGS	Gate- source Voltage	± 12	V
ID	Drain Current (continuous) at TC = 25°C	2.5	A
ID	Drain Current (continuous) at TC = 100°C	1.58	A
IDM()	Drain Current (pulsed)	10	A
Ptot	Total Dissipation at TC = 25°C	2	W

Description

This STS2DPFS20V associates the latest low voltage StripFET? in p-channel version to a low drop Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.


Parameters:

Technical/Catalog Information	STS2DPFS20V
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.5A
Rds On (Max) @ Id, Vgs	200 mOhm @ 1A, 4.5V
Input Capacitance (Ciss) @ Vds	315pF @ 15V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.7nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STS2DPFS20V STS2DPFS20V 497 3225 2 ND 49732252ND 497-3225-2