Features: ·S uper high dense cell design for low R DS (ON).·R ugged and reliable.·S OT-23 P ackage.Specifications P arameter S ymbol Limit Unit Drain-S ource Voltage VDS - 30 V Gate-S ource Voltage VGS ±20 V Drain Current-Continuous @ TJ=125 C -Pulsed IDIDM - 3- 10 A D...
STS3401: Features: ·S uper high dense cell design for low R DS (ON).·R ugged and reliable.·S OT-23 P ackage.Specifications P arameter S ymbol Limit Unit Drain-S ource Voltage VDS - 30 V Gate...
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| P arameter | S ymbol | Limit | Unit |
| Drain-S ource Voltage | VDS | - 30 | V |
| Gate-S ource Voltage | VGS | ±20 | V |
| Drain Current-Continuous @ TJ=125 C -Pulsed | ID IDM |
- 3 - 10 |
A |
| Drain-S ource Diode Forward Current | IS | -1.25 | A |
| Maximum Power Dissipation | PD | 1.25 | W |
| Operating Junction and S torage Temperature R ange |
TJ , TSTG | -55 to 150 |