Application·DC/DC CONVERTERS·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT·POWER MANAGEMENT IN CELLULAR PHONESPinoutSpecifications Symbol Parameter Value Unit N-CHANNEL P-CHANNEL VDS Drain-source Voltage (VGS = 0) 30 30 V VDGR Drain- gate Voltage ...
STS3C3F30L: Application·DC/DC CONVERTERS·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT·POWER MANAGEMENT IN CELLULAR PHONESPinoutSpecifications Symbol Parameter Value Unit N-CHANNEL P-C...
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|
Symbol |
Parameter |
Value |
Unit | |
|
N-CHANNEL |
P-CHANNEL | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kΏ) |
30 |
30 |
V |
|
VGS |
Gate-Source Voltage |
±16 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
3.5 |
2.7 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
2.2 |
1.7 |
A |
|
IDM(1) |
Drain Current (pulsed) |
14 |
11 |
A |
|
PTOT |
Total Dissipation at TC = 25°C Single Operation Total Dissipation at TC = 25°C Dual Operation |
1.6 2 |
W | |
|
Tstg |
Storage Temperature |
-65 to 150 |
||
|
Tj |
Max. Operating Junction Temperature |
150 |
||
This Power MOSFET STS3C3F30L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.