STS3C3F30L

Application·DC/DC CONVERTERS·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT·POWER MANAGEMENT IN CELLULAR PHONESPinoutSpecifications Symbol Parameter Value Unit N-CHANNEL P-CHANNEL VDS Drain-source Voltage (VGS = 0) 30 30 V VDGR Drain- gate Voltage ...

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STS3C3F30L Picture
SeekIC No. : 004508777 Detail

STS3C3F30L: Application·DC/DC CONVERTERS·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT·POWER MANAGEMENT IN CELLULAR PHONESPinoutSpecifications Symbol Parameter Value Unit N-CHANNEL P-C...

floor Price/Ceiling Price

Part Number:
STS3C3F30L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Application

·DC/DC CONVERTERS
·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN CELLULAR PHONES



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
N-CHANNEL
P-CHANNEL
VDS
Drain-source Voltage (VGS = 0)
30
30
V
VDGR
Drain- gate Voltage (RGS = 20 kΏ)
30
30
V
VGS
Gate-Source Voltage
±16
V
ID
Drain Current (continuous) at Tc = 25
3.5
2.7
A
ID

Drain Current (continuous) at Tc = 100
2.2
1.7
A
IDM(1)
Drain Current (pulsed)
14
11
A
PTOT
Total Dissipation at TC = 25°C Single Operation
Total Dissipation at TC = 25°C Dual Operation
1.6
2
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
(1)Pulse width limited by safe operating area .



Description

This Power MOSFET STS3C3F30L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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