STS3DPF20V

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.11 Ohms
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 3 A


Application

·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·MOBILE PHONE APPLICATIONS


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	20	V
VDGR	Drain- gate Voltage (RGS = 20 k)	20	V
VGS	Gate-Source Voltage	± 12	V
ID	Drain Current (continuous) at Tc = 25 Single Operation	3	A
ID	Drain Current (continuous) at Tc = 100 Single Operation	1.9	A
IDM(`)	Drain Current (pulsed)	12	A
PTOT	Total Dissipation at TC = 25°CDual Operation Total Dissipation at TC = 25°CSingle Operation	1.6 2	W W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STS3DPF20V is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.