Application·BATTERY MANAGMENT IN NOMADIC EQUIPMENT·POWER MANAGMENT IN CELLULAR PHONES·DC-DC CONVERTERPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain- gate Voltage (RGS = 20 k) 30 V VGS Gate-Sour...
STS3DPF30L: Application·BATTERY MANAGMENT IN NOMADIC EQUIPMENT·POWER MANAGMENT IN CELLULAR PHONES·DC-DC CONVERTERPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage...
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·BATTERY MANAGMENT IN NOMADIC EQUIPMENT
·POWER MANAGMENT IN CELLULAR PHONES
·DC-DC CONVERTER

|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 Single Operation |
3 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 Single Operation |
1.9 |
A |
|
IDM(`) |
Drain Current (pulsed) |
12 |
A |
|
PTOT |
Total Dissipation at TC = 25°CDual Operation Total Dissipation at TC = 25°CSingle Operation |
2.0 1.6 |
W |
This Power MOSFET STS3DPF30L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.