STS3DPF30L

Application·BATTERY MANAGMENT IN NOMADIC EQUIPMENT·POWER MANAGMENT IN CELLULAR PHONES·DC-DC CONVERTERPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain- gate Voltage (RGS = 20 k) 30 V VGS Gate-Sour...

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STS3DPF30L Picture
SeekIC No. : 004508778 Detail

STS3DPF30L: Application·BATTERY MANAGMENT IN NOMADIC EQUIPMENT·POWER MANAGMENT IN CELLULAR PHONES·DC-DC CONVERTERPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage...

floor Price/Ceiling Price

Part Number:
STS3DPF30L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Application

·BATTERY MANAGMENT IN NOMADIC EQUIPMENT
·POWER MANAGMENT IN CELLULAR PHONES
·DC-DC CONVERTER




Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain- gate Voltage (RGS = 20 k)
30
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25 Single Operation
3
A
ID

Drain Current (continuous) at Tc = 100 Single Operation
1.9
A
IDM(`)
Drain Current (pulsed)
12
A
PTOT
Total Dissipation at TC = 25°CDual Operation
Total Dissipation at TC = 25°CSingle Operation

2.0
1.6

W
W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STS3DPF30L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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