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STS4DNFS30

MOSFET N Ch 30V 0.044 Ohm 4.5A

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SeekIC No. : 00163833 Detail

STS4DNFS30: MOSFET N Ch 30V 0.044 Ohm 4.5A

STS4DNFS30 Data Sheet

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Part Number:
STS4DNFS30
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.055 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 4.5 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.055 Ohms


Application

·Switching application


Pinout

Connection Diagram


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source voltage (VGS = 0)
30
V
VGS Gate- source voltage
± 20
V
ID Drain current (continuous) at TC = 25°C
4.5
A
ID Drain current (continuous) at TC = 100°C
3.2
A
IDM(1) Drain current (pulsed)
13
A
PTOT Total dissipation at TC = 25°C
2
W
1. Pulse width limited by safe operating area


Description

This STS4DNFS30 associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing a large variety of DC-DC converters for printers, portable equipment.




Parameters:

Technical/Catalog InformationSTS4DNFS30
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4.5A
Rds On (Max) @ Id, Vgs55 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 330pF @ 25V
Power - Max2W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs4.7nC @ 5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STS4DNFS30
STS4DNFS30
497 6187 1 ND
49761871ND
497-6187-1



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