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STS4NM20N

Features: ` WORLDWIDE LOWEST GATE CHARGE` TYPICAL RDS(on) = 0.11` HIGH dv/dt and AVALANCHE CAPABILITIES` LOW INPUT CAPACITANCE` LOW GATE RESISTANCE` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDSApplicationThe MDmeshTM family is very suitable for increasing power density allowing system minia...

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SeekIC No. : 004508786 Detail

STS4NM20N: Features: ` WORLDWIDE LOWEST GATE CHARGE` TYPICAL RDS(on) = 0.11` HIGH dv/dt and AVALANCHE CAPABILITIES` LOW INPUT CAPACITANCE` LOW GATE RESISTANCE` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIEL...

STS4NM20N Data Sheet

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Part Number:
STS4NM20N
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

` WORLDWIDE LOWEST GATE CHARGE
` TYPICAL RDS(on) = 0.11
` HIGH dv/dt and AVALANCHE CAPABILITIES
` LOW INPUT CAPACITANCE
` LOW GATE RESISTANCE
` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

The MDmeshTM family is very suitable for increasing power density allowing system miniaturization and higher efficiencies




Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
200
V
VDGR
 Drain-gate Voltage (RGS = 20 k)
200
V
VGS
 Gate- source Voltage
±30
V
ID
 Drain Current (continuos) at TC = 25
Drain Current (continuos) at TC = 100
4
2.83
A
A
IDM (2)
 Drain Current (pulsed)
16
A
Ptot
 Total Dissipation at TC = 25
2.5
W
 Derating Factor(1)
0.02
W/
dv/dt (3)
 Peak Diode Recovery voltage slope
10
V/ns




Description

This 200V MOSFET STS4NM20N  with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The STS4NM20N  exhibits worldwide lowest gate charge for any given on-resistance.Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications. Used in combination with secondary-side low-voltage STripFETTM products, it contributes to reducing losses and boosting efficiency




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