STS5DNF20V

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.03 Ohms


Application

·DC MOTOR DRIVE
·DC-DC CONVERTERS
·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN PORTABLE/DESKTOP PCs


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	20	V
VDGR	Drain- gate Voltage (RGS = 20 k)	20	V
VGS	Gate-Source Voltage	± 12	V
ID	Drain Current (continuous) at Tc = 25 Single Operation	5	A
ID	Drain Current (continuous) at Tc = 100 Single Operation	3	A
IDM(`)	Drain Current (pulsed)	20	A
PTOT	Total Dissipation at TC = 25Dual Operation                  Total Dissipation at TC = 25Single Operation	1.6 2	W W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STS5DNF20V  is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STS5DNF20V
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	40 mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) @ Vds	460pF @ 25V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	11.5nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS5DNF20V STS5DNF20V 497 3229 6 ND 49732296ND 497-3229-6