Features: ·Super high dense cell des ign for low R DS (ON).·Rugged and reliable.·Surface Mount P ackage.·ES D P rotected.PinoutSpecifications Symbol Parameter Limit UNIT VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±10 V ID Drain Current-Conti...
STS8235: Features: ·Super high dense cell des ign for low R DS (ON).·Rugged and reliable.·Surface Mount P ackage.·ES D P rotected.PinoutSpecifications Symbol Parameter Limit UNIT VDS Dr...
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|
Symbol |
Parameter |
Limit |
UNIT | |
|
VDS |
Drain-Source Voltage |
30 |
V | |
|
VGS |
Gate-Source Voltage |
±10 |
V | |
|
ID |
Drain Current-Continuous a | TA=25 |
4.5 |
A |
| TA=70 |
3.6 |
A | ||
|
IDM |
-Pulsed b |
18 |
A | |
|
PD |
Maximum Power Dissipation a | TA=25 |
1.25 |
A |
| TA=70 |
0.8 |
W | ||
|
TJ, TSTG |
Operating Junction and Storage Temperature Range |
-55 to 150 |
||