STS9NF3LL

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Resistance Drain-Source RDS (on) : 19 mOhms
Continuous Drain Current : 9 A
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : SO N


Application

SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	12	A
ID	Drain Current (continuous) at Tc = 100	7.5	A
IDM(`)	Drain Current (pulsed)	48	A
PTOT	Total Dissipation at Tc = 25	2.5	W

(•)Pulse width limited by safe operating area


Description

This application specific Power MOSFET STS9NF3LL is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

Parameters:

Technical/Catalog Information	STS9NF3LL
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	19 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	800pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS9NF3LL STS9NF3LL 497 8196 1 ND 49781961ND 497-8196-1