STSJ100NHS3LL

      The voltage of STSJ100NHS3LL is 30V,while the resistance is 0.0042,the current is 20A.STSJ100NHS3LL utilizes the latest advanced design rules of ST's proprietary STripFET™ technology and a propriertary process for integrating a monolithic scottky diode. The new Power MOSFET is optimized for the most demanding synchronous switch function in DC-DC converter for Computer and Telecom.
      There are three features of STSJ100NHS3LL.The first of all is that it can Reduce switching losses.The second is that it can Reduce conduction losses.The third is that it can Improve junction-case thermal resistance.The Switching application is very important.
      The following is about Absolute maximum ratings.The Symbol of Drain-source voltage (VGS = 0) is VDS ,and the Value is 30 V. The Symbol of Gate-source voltage (VGS = 0) is VGS ,and the Value is ±16 V. The Symbol of Drain current (pulsed) is I_DM ,and the Value is  80 A.The Symbol of Total dissipation at TC = 25°C(2) is P^_TOT,the Value is 70W,while the Value Total dissipation at TC = 25°C(1) is 3W.The Symbol of Operating junction temperature is T_J,while the Symbol of Storage temperature is T_stg,and the value is from -55 to 150 °C.