STSJ100NH3LL

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : PowerPAK SO-8
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.0035 Ohms


Application

SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 18	V
ID	Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TA = 25°C (#) Drain Current (continuous) at TC = 100°C	100 12 62.5	A A A
IDM(`)	Drain Current (pulsed)	400	A
PTOT	Total Dissipation at TC = 25°C Total Dissipation at TA = 25°C (#)	70 3	W W

 (`) Pulse width limited by safe operating area


Description

The STSJ100NH3LL utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This process compled to unique metallization techniques realizes the most advanced low voltage MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability.

Parameters:

Technical/Catalog Information	STSJ100NH3LL
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	3.5 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds	4450pF @ 25V
Power - Max	3W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	40nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STSJ100NH3LL STSJ100NH3LL 497 5785 1 ND 49757851ND 497-5785-1