Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 20 V
Gate-Source Breakdown Voltage
: +/- 12 V
Configuration
: Single Quad Drain
Resistance Drain-Source RDS (on)
: 0.14 Ohms
Continuous Drain Current
: 2.2 A
Package / Case
: SOT-23-6
Application·DC-DC CONVERTERS
·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·CELLULAR
Pinout
Specifications
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
20 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
20 |
V |
|
VGS |
Gate-Source Voltage |
± 12 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
2.2 |
A |
|
ID |
Drain Current (continuous) at Tc = 100
|
1.39 |
A |
|
IDM(`) |
Drain Current (pulsed) |
8.8 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
1.6 |
W |
(•)Pulse width limited by safe operating area
DescriptionThis Power MOSFET STT3PF20V is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Parameters: | Technical/Catalog Information | STT3PF20V |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.2A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 315pF @ 15V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 4.7nC @ 4.5V |
| Package / Case | SOT-23-6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STT3PF20V
STT3PF20V
|
STT3PF20V Data Sheet
