Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Configuration
: Single Quad Drain
Gate-Source Breakdown Voltage
: +/- 16 V
Continuous Drain Current
: 2.4 A
Resistance Drain-Source RDS (on)
: 0.14 Ohms
Package / Case
: SOT-23-6
Application· DC MOTOR DRIVE
· DC-DC CONVERTERS
· BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
· POWER MANAGEMENT IN PORTABLE/DESKTOP PCs
· CELLULARPinout
Specifications
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 16 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
2.4 |
A |
|
ID |
Drain Current (continuous) at Tc = 100
|
1.5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
10 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
1.6 |
W |
(•)Pulse width limited by safe operating area
DescriptionThis Power MOSFET STT3PF30L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Parameters: | Technical/Catalog Information | STT3PF30L |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 2.4A |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 420pF @ 25V |
| Power - Max | 1.6W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 7nC @ 4.5V |
| Package / Case | SOT-23-6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STT3PF30L
STT3PF30L
497 8046 1 ND
49780461ND
497-8046-1
|
STT3PF30L Data Sheet
