MOSFET POWER MOSFET N-CH 650V 8.5 A
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Features: The built-in back-to-back Zener diodes have specifically been designed to enhance not on...
Features: The built-in back-to-back Zener diodes have specifically been designed to enhance not on...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
| Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 8.5 A | ||
| Resistance Drain-Source RDS (on) : | 430 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | IPAK | Packaging : | Tube |