Features: · TYPICAL RDS(on) = 0.125W· HIGH dv/dt AND AVALANCHE CAPABILITIES· IMPROVED ESD CAPABILITY· LOW INPUT CAPACITANCE AND GATE CHARGE· LOW GATE INPUT RESISTANCEApplicationThe MDmesh] family is very suitable for increasing power density of high voltage converters allowing system miniaturizati...
STU26NM60: Features: · TYPICAL RDS(on) = 0.125W· HIGH dv/dt AND AVALANCHE CAPABILITIES· IMPROVED ESD CAPABILITY· LOW INPUT CAPACITANCE AND GATE CHARGE· LOW GATE INPUT RESISTANCEApplicationThe MDmesh] family is...
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The MDmesh] family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
|
Symbol |
Item |
Ratings |
Unit | ||
| STW26NM60 | STU26NM60 | STU26NM60I | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V | ||
|
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
600 |
V | ||
|
VGS |
Gate- source Voltage |
± 30
|
V | ||
|
Id |
Drain Current (continuos) at TC = 25°C |
30 |
26 |
26(*) |
A |
|
Id |
Drain Current (continuos) at TC = 100°C |
18.9 |
16.38 |
16.38(*) |
A |
|
IDM(1) |
Drain Current (pulsed) |
120 |
104 |
104(*) |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
313 |
192 |
73 |
W |
| Derating Factor |
2.5 |
1.54 |
0.58 |
W/ | |
|
PESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
6000 |
V | ||
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
15 |
V/ns | ||
|
TJ TSTG |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
| ||
The MDmesh] STU26NM60 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH] horizontal layout. The resulting product STU26NM60 has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.