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Part Number: STU9NC80ZI

 

 

 

 

Description: The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed o...


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STU9NC80ZI General Description


The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

STU9NC80ZI Maximum Ratings

Symbol
Parameter
Value
Unit
 
STU9NC80Z
STU9NC80ZI
VDS
Drain-source Voltage (VGS = 0)
800
V
VDGR
Drain-gate Voltage (RGS = 20 k)
800
V
VGS
Gate- source Voltage
±25
V
ID
Drain Current (continuos) at TC = 25°C
8.6
8.6(*)
A
ID
Drain Current (continuos) at TC = 100°C
5.4
5.4(*)
A
IDM (1)
Drain Current (pulsed)
34.4
34.4(*)
A
PTOT
Total Dissipation at TC = 25°C
160
55
W
Derating Factor
1.28
0.44
W/°C
IGS
Gate-source Current
±50
mA
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K)
4
KV
dv/dt(`)
Peak Diode Recovery voltage slope
3
V/ns
VISO
Insulation Winthstand Voltage (DC)
-
2000
V
Tstg
Storage Temperature
65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(•)Pulse width limited by safe operating area
(1)ISD 8.6A, di/dt 100A/s, VDD V(BR)DSS, TjTJMAX
(*)Limited only by maximum temperature allowed

STU9NC80ZI Features

` TYPICAL RDS(on) = 0.82
` EXTREMELY HIGH dv/dt CAPABILITY
`GATE-TO-SOURCE ZENER DIODES
`100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED

STU9NC80ZI Typical Application

· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
· WELDING EQUIPMENT

STU9NC80ZI datasheet

STU9NC80ZI
PDF/DataSheet Download

  • Datasheet: STU9NC80ZI
  • File Size: 305667 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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