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STW200NF03

Transistors Bipolar (BJT) N-Ch 30 Volt 120 Amp

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SeekIC No. : 00210382 Detail

STW200NF03: Transistors Bipolar (BJT) N-Ch 30 Volt 120 Amp

STW200NF03 Data Sheet

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Part Number:
STW200NF03
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Configuration : Single
Mounting Style : Through Hole Package / Case : TO-247-3
Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Maximum Operating Frequency :
Maximum Operating Temperature :
Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-247-3


Application

·HIGH-EFFICIENCY DC-DC CONVERTERS
·HIGH CURRENT, HIGH SWITCHING SPEED
·OR-ING FUNCTION


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

 30 V
VDGR

Drain- gate Voltage (RGS = 20 k)

 30 V
VGS

Gate-source Voltage

 ±20 V
ID(`)

Drain Current (continuous) at Tc = 25

120 A
ID

Drain Current (continuous) at Tc = 100

120 A
IDM(``)

Drain Current (pulsed)

 480 A
Ptot

Total Dissipation at Tc = 25

350 W

Derating Factor

 2.33 W/

dv/dt (1)

 Peak Diode Recovery voltage slope

1.5

V/ns

EAS (2)

 Single Pulse Avalanche Energy

4

J

Tstg

Storage Temperature

 -55 to 175
Tj

Max. Operating Junction Temperature

(``) Pulse width limited by safe operating area.               (1) ISD 120A, di/dt 200A/µs, VDD  V(BR)DSS, Tj TJMAX.
(`)Current limited by package                                            (2) Starting Tj = 25 oC, ID = 60 A, VDD= 15V




Description

This Power MOSFET STW200NF03 series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.STW200NF03 is particularly suitable in OR-ing function circuits and synchronous rectification.




Parameters:

Technical/Catalog InformationSTW200NF03
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs2.8 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds 10000pF @ 25V
Power - Max350W
PackagingTube
Gate Charge (Qg) @ Vgs280nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW200NF03
STW200NF03



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