Position: Home  > All Categories> Integrated Circuits (ICs) > STW200NF03

STW200NF03

Transistors Bipolar (BJT) N-Ch 30 Volt 120 Amp

product image

STW200NF03 Picture
See larger image
SeekIC No. : 00210382 Detail

STW200NF03: Transistors Bipolar (BJT) N-Ch 30 Volt 120 Amp

STW200NF03 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STW200NF03
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : NPN Configuration : Single
Mounting Style : Through Hole Package / Case : TO-247-3
Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Maximum Operating Frequency :
Maximum Operating Temperature :
Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-247-3


Application

·HIGH-EFFICIENCY DC-DC CONVERTERS
·HIGH CURRENT, HIGH SWITCHING SPEED
·OR-ING FUNCTION


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

 30 V
VDGR

Drain- gate Voltage (RGS = 20 k)

 30 V
VGS

Gate-source Voltage

 ±20 V
ID(`)

Drain Current (continuous) at Tc = 25

120 A
ID

Drain Current (continuous) at Tc = 100

120 A
IDM(``)

Drain Current (pulsed)

 480 A
Ptot

Total Dissipation at Tc = 25

350 W

Derating Factor

 2.33 W/

dv/dt (1)

 Peak Diode Recovery voltage slope

1.5

V/ns

EAS (2)

 Single Pulse Avalanche Energy

4

J

Tstg

Storage Temperature

 -55 to 175
Tj

Max. Operating Junction Temperature

(``) Pulse width limited by safe operating area.               (1) ISD 120A, di/dt 200A/µs, VDD  V(BR)DSS, Tj TJMAX.
(`)Current limited by package                                            (2) Starting Tj = 25 oC, ID = 60 A, VDD= 15V




Description

This Power MOSFET STW200NF03 series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.STW200NF03 is particularly suitable in OR-ing function circuits and synchronous rectification.




Parameters:

Technical/Catalog InformationSTW200NF03
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs2.8 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds 10000pF @ 25V
Power - Max350W
PackagingTube
Gate Charge (Qg) @ Vgs280nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW200NF03
STW200NF03



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.