STW20NM50FD

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.25 Ohms


Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT

Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	500	V
VDGR	Drain- gate Voltage (RGS = 20 k)	500	V
VGS	Gate-Source Voltage	± 30	V
ID	Drain Current (continuous) at Tc = 25	20	A
ID	Drain Current (continuous) at Tc = 100	14	A
IDM(`)	Drain Current (pulsed)	80	A
PTOT	Total Dissipation at Tc = 25	214	W
	Derating Factor	1.42	W/
dv/dt(1)	Peak Diode Recovery voltage slope	20	V/ns
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

(`) Pulse width limited by safe operating area (1) I_SD 14 A, di/dt 200 A/s, V_DD V_(BR)DSS, T_j T_JMAX

(*)Limited only by maximum temperature allowed

 

Description

The FDmesh™ STW20NM50FD associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. STW20NM50FD is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters.

Parameters:

Technical/Catalog Information	STW20NM50FD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	250 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1380pF @ 25V
Power - Max	214W
Packaging	Tube
Gate Charge (Qg) @ Vgs	53nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW20NM50FD STW20NM50FD 497 2717 5 ND 49727175ND 497-2717-5