STW20NM60

MOSFET N-Ch 600 Volt 20 Amp

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SeekIC No. : 00151384 Detail

STW20NM60: MOSFET N-Ch 600 Volt 20 Amp

floor Price/Ceiling Price

US $ 2.14~3.4 / Piece | Get Latest Price
Part Number:
STW20NM60
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.4
  • $2.83
  • $2.49
  • $2.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.29 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.29 Ohms


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

600 V
VDGR

Drain- gate Voltage (RGS = 20 k)

600 V
VGS

Gate-source Voltage

±30 V
ID

Drain Current (continuous) at Tc = 25

20 A
ID

Drain Current (continuous) at Tc = 100

12.6 A
IDM(•)

Drain Current (pulsed)

80 A
PTOT

Total Dissipation at Tc = 25

214 W

Derating Factor

1.44 W/

dv/dt(1)

Peak Diode Recovery voltage slope

15

V/ns

Tstg

Storage Temperature

-65 to 150
Tj

Max. Operating Junction Temperature

150
(•)Pulse width limited by safe operating area


Description

The MDmesh™ STW20NM60 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.




Parameters:

Technical/Catalog InformationSTW20NM60
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs290 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max192W
PackagingTube
Gate Charge (Qg) @ Vgs54nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW20NM60
STW20NM60
497 3263 5 ND
49732635ND
497-3263-5



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