STW220NF75

MOSFET N-Channel 650V Pwr Mosfet

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SeekIC No. : 00163326 Detail

STW220NF75: MOSFET N-Channel 650V Pwr Mosfet

floor Price/Ceiling Price

Part Number:
STW220NF75
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 0.0044 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.0044 Ohms


Features:

` TYPICAL RDS(on) = 0.004
` STANDARD THRESHOLD DRIVE
` 100% AVALANCHE TESTED



Application

· HIGH CURRENT, HIGH SWITCHING SPEED
· AUTOMOTIVE 42V BATTERY SYSTEM
· OR-ING FUNCTION



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
75
V
VDGR
Drain-gate Voltage (RGS = 20 k)
75
V
VGS
Gate- source Voltage
± 20
V
ID(**)
Drain Current (continuos) at TC = 25
120
A
ID(**)
Drain Current (continuos) at TC = 100
120
A
IDM (`)
Drain Current (pulsed)
480
A
Ptot
Total Dissipation at TC = 25
500
W
Derating Factor
3.33
W/
dv/dt (1)
Peak Diode Recovery voltage slope
10
V/ns
EAS (2)
Single Pulse Avalanche Energy
2500
mJ
Tstg
Storage Temperature
-55 to 175
Tj
Max. Operating Junction Temperature

(`) Pulse width limited by safe operating area.

Note: Marking will be STV160NF02AL
(1) ISD 120A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25, ID = 60 A, VDD = 30V


Description

This Power MOSFET STW220NF75 is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTW220NF75
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs4.4 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds 12500pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs430nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW220NF75
STW220NF75
497 4124 5 ND
49741245ND
497-4124-5



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