STW28NK60Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Resistance Drain-Source RDS (on) : 0.185 Ohms
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Continuous Drain Current : 27 A


Features:

` TYPICAL RDS(on) = 0.155
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES
· WELDING MACHINES
· LIGHTING


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	600	V
VDGR	Drain-gate Voltage (RGS = 20 K)	600	V
VGS	Gate- source Voltage	±30	V
ID	Drain Current (continuous) at TC = 25°C	27	A
ID	Drain Current (continuous) at TC = 100°C	17	A
IDM*	Drain Current (pulsed)	108	A
PTOT	Total Dissipation at TC = 25°C	350	W
	Derating Factor	2.77	W/°C
VESD(G-S)	Gate source ESD (HBM-C = 100pF, R = 1.5 K)	6000	V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
Tstg Tj	Storage Temperature Operating Junction Temperature	-55 to 150	°C

(*) Pulse width limited by safe operating area
(1) I_SD 27 A, di/dt 200 A/s, V_DD V_(BR)DSS, T_J T_JMAX


Description

The SuperMESH™ series STW28NK60Z is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MSmesh™ products.

Parameters:

Technical/Catalog Information	STW28NK60Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	185 mOhm @ 13.5A, 10V
Input Capacitance (Ciss) @ Vds	6350pF @ 25V
Power - Max	350W
Packaging	Tube
Gate Charge (Qg) @ Vgs	264nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW28NK60Z STW28NK60Z 497 4424 5 ND 49744245ND 497-4424-5