Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-247
Continuous Drain Current
: 4 A
Resistance Drain-Source RDS (on)
: 7 Ohms
Drain-Source Breakdown Voltage
: 1500 V
Application·SWITCH MODE POWER SUPPLIESSpecifications
| Symbol |
Parameter |
Value |
Unit |
VDS
|
Drain-source Voltage (VGS = 0) |
1500 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
1500 |
V |
| VGS |
Gate-source Voltage |
±30 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
4 |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
2.5 |
A |
| IDM(+) |
Drain Current (pulsed) |
12 |
A |
| PTOT |
Total Dissipation at Tc = 25 |
160 |
W |
|
Derating Factor |
1 |
W/ |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
-55 to 150 |
|
(+) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowedDescriptionUsing the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics STW4N150 has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
Parameters: | Technical/Catalog Information | STW4N150 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1500V (1.5kV) |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 7 Ohm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW4N150
STW4N150
497 5092 5 ND
49750925ND
497-5092-5
|
STW4N150 Data Sheet
