STW50NB20

MOSFET N-Ch 200 Volt 50 Amp

product image

STW50NB20 Picture
SeekIC No. : 00163883 Detail

STW50NB20: MOSFET N-Ch 200 Volt 50 Amp

floor Price/Ceiling Price

Part Number:
STW50NB20
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.055 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.055 Ohms


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITCH MODE POWER SUPPLIES(SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE



Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

200 V
VDGR

Drain- gate Voltage (RGS = 20 k)

200 V
VGS

Gate-source Voltage

±30 V
ID

Drain Current (continuous) at Tc = 25

50 A
ID

Drain Current (continuous) at Tc = 100

32 A
IDM(•)

Drain Current (pulsed)

200 A
PTOT

Total Dissipation at Tc = 25

280 W

Derating Factor

2.24 W/

dv/dt(1)

Peak Diode Recovery voltage slope

4

V/ns

Tstg

Storage Temperature

-65 to 150
Tj

Max. Operating Junction Temperature

150
(•)Pulse width limited by safe operating area
(1)ISD 50A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.



Description

Using the latest high voltage technology,STMicroelectronics STW50NB20 has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




Parameters:

Technical/Catalog InformationSTW50NB20
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs55 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 3400pF @ 25V
Power - Max280W
PackagingTube
Gate Charge (Qg) @ Vgs115nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STW50NB20
STW50NB20
497 2670 5 ND
49726705ND
497-2670-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
LED Products
Boxes, Enclosures, Racks
Soldering, Desoldering, Rework Products
Hardware, Fasteners, Accessories
Industrial Controls, Meters
Computers, Office - Components, Accessories
View more