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STW7NA80

MOSFET REORD 511-STW7NB80 TO-247 N-CH 800V

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SeekIC No. : 00165688 Detail

STW7NA80: MOSFET REORD 511-STW7NB80 TO-247 N-CH 800V

STW7NA80 Data Sheet

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Part Number:
STW7NA80
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 1.9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 1.9 Ohms


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
   UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE




Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
STW7NA80
STH7NA80FI
VDS
 Drain-source Voltage (VGS = 0)
800
V
VDGR
 Drain-gate Voltage (RGS = 20 kW)
800
V
VGS
 Gate- source Voltage
±30
V
ID
 Drain Current (continuos) at TC = 25°C
6.5
4
A
ID
 Drain Current (continuos) at TC = 100°C
4
2.5
A
IDM ()
 Drain Current (pulsed)         26
26
A
PTOT
 Total Dissipation at TC = 25°C
150
60
W
 Derating Factor
1.2
0.48
W/°C
VISO
 Insulation Withstand Voltage (DC)
-
4000
V
Tstg
 Storage Temperature
65 to 150
°C
Tj
 Max. Operating Junction Temperature
150
°C



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