Transistors Bipolar (BJT) POWER TRANSISTOR
STX13005: Transistors Bipolar (BJT) POWER TRANSISTOR
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 400 V | ||
| Emitter- Base Voltage VEBO : | 9 V | Maximum DC Collector Current : | 3 A | ||
| DC Collector/Base Gain hfe Min : | 10 | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-92 | Packaging : | Bulk |
| Symbol | Parameter | Value | Unit |
| VCES |
Collector-Emitter Voltage (VBE = 0) |
700 | V |
| VCEO |
Collector-Emitter Voltage (IB = 0) |
400 | V |
| VEBO |
Emitter-Base Voltage (IC = 0, IB < 1.5 A, tp < 10 ms) |
V(BR)EBO | V |
|
IC |
Collector Current |
3 |
A |
| ICM |
Collector Peak Current (tp < 5 ms) |
6 | A |
| IB |
Base Current |
1.5 | A |
| IBM |
Base Peak Current (tp < 5 ms) |
3 | A |
| Ptot |
Total Dissipation at TC = 25 |
2.8 | W |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
The STX13005 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
STX13005 uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
| Technical/Catalog Information | STX13005 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Current - Collector (Ic) (Max) | 3A |
| Power - Max | 2.8W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 750mA, 3A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 1mA |
| Mounting Type | Through Hole |
| Package / Case | TO-92-3 (Straight Leads) |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STX13005 STX13005 497 4429 ND 4974429ND 497-4429 |