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STY30NK90Z

MOSFET N-Ch 900 Volt 26 Amp Zener SuperMESH

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SeekIC No. : 00163159 Detail

STY30NK90Z: MOSFET N-Ch 900 Volt 26 Amp Zener SuperMESH

STY30NK90Z Data Sheet

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Part Number:
STY30NK90Z
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Upload time: 2025/12/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.21 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : Max247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Package / Case : Max247
Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.21 Ohms


Features:

Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility


Application

Switching application


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source voltage (VGS = 0)
900
V
VGS
 Gate- source voltage
± 30
V
ID
 Drain current (continuous) at TC = 25
26
A
ID
 Drain current (continuous) at TC = 100
16
A
IDM 1
Drain current (pulsed)
104
A
Ptot
 Total dissipation at TC = 25
450
W
 Derating Factor
3.57
W/
VESD(G-S)
 Gate source ESD(HBM-C=100pF, R=1.5K)
6000
V
dv/dt 2
Peak diode recovery voltage slope
4.5
V/ns
Tstg
 Storage temperature
-65 to 150
Tj
 Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD 26A, di/dt 400A/s, VDD V(BR)DSS, Tj TJMAX.


Description

The SuperMESH™ series STY30NK90Z is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTY30NK90Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs260 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds 12000pF @ 25V
Power - Max450W
PackagingTube
Gate Charge (Qg) @ Vgs490nC @ 10V
Package / CaseMAX247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STY30NK90Z
STY30NK90Z
497 4431 5 ND
49744315ND
497-4431-5



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