SUB60N04-15LT

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.015 Ohms


Features:

Temperature-Sense Diodes for Thermal Shutdown
Logic-Level Low On-Resistance
Avalanche Rated
175 Junction Temperature
Low Gate Charge
Fast Turn-On Time
5-Lead D²PAK
>2000-V ESD Rated


Pinout




Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	40	V
Gate-Source Voltage		VGS	±20
VGS Clamp Current		IG	50	mA
Continuous Drain Current (TJ = 175)	TC = 25	ID	60	A
	TC = 125		50
Source-to-Cathode Voltage		VSC	100	V
Source-to-Anode Voltage		VSA	100
Avalanche Current		IAR	50	A
Repetitive Avalanche Energy (Duty Cycle 1%)	L = 0.1 mH	EAR	125	mJ
Maximum Power Dissipation	TC = 25	PD	110	W
	TA = 25		3.75
Operating Junction and Storage Temperature Range		TJ, Tstg	55 to 175

Description

The SUB60N04-15LT is a 40-V n-channel, 15-m logic level MOSFET in a 5-lead D²PAK package built on the Vishay Siliconix proprietary high-cell density TrenchFET technology.

Two anti-parallel electrically isolated poly-silicon diodes are used to sense the temperature changes in the MOSFET.

The gate of the MOSFET of the SUB60N04-15LT is protected from high voltage transients by two back-to-back poly-silicon zener diodes.