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MFG:VISHAY  Package Cooled:TO263  D/C:2002  

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Part Number: SUB60N04-15LT

 

MFG: VISHAY

Package Cooled: TO263

D/C: 2002

Description: The SUB60N04-15LT is a 40-V n-channel, 15-m logic level MOSFET in a 5-lead D...


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SUB60N04-15LT General Description


The SUB60N04-15LT is a 40-V n-channel, 15-m logic level MOSFET in a 5-lead D2PAK package built on the Vishay Siliconix proprietary high-cell density TrenchFET technology.

Two anti-parallel electrically isolated poly-silicon diodes are used to sense the temperature changes in the MOSFET.

The gate of the MOSFET is protected from high voltage transients by two back-to-back poly-silicon zener diodes.

SUB60N04-15LT Maximum Ratings

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20
VGS Clamp Current IG 50 mA
Continuous Drain Current (TJ = 175) TC = 25 ID 60 A
TC = 125 50
Source-to-Cathode Voltage VSC 100 V
Source-to-Anode Voltage VSA 100
Avalanche Current IAR 50 A
Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR 125 mJ
Maximum Power Dissipation TC = 25 PD 110 W
TA = 25 3.75
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 175

SUB60N04-15LT Features

Temperature-Sense Diodes for Thermal Shutdown
Logic-Level Low On-Resistance
Avalanche Rated
175 Junction Temperature
Low Gate Charge
Fast Turn-On Time
5-Lead D2PAK
>2000-V ESD Rated

SUB60N04-15LT Connection Diagram

SUB60N04-15LT Connection Diagram

SUB60N04-15LT datasheet

SUB60N04-15LT
PDF/DataSheet Download

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