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SUB65P04-15

MOSFET 40V 65A 120W

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SeekIC No. : 00164510 Detail

SUB65P04-15: MOSFET 40V 65A 120W

SUB65P04-15 Data Sheet

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Part Number:
SUB65P04-15
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 65 A
Resistance Drain-Source RDS (on) : 15 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263-3 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Transistor Polarity : P-Channel
Package / Case : TO-263-3
Resistance Drain-Source RDS (on) : 15 mOhms
Continuous Drain Current : 65 A


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)

Parameter

 Symbol Limit Unit
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ±20
Continuous Drain Current
(TJ = 175)		 TC = 25 ID -65 A
TC = 125 -37
Pulsed Drain Current IDM -240
Avalanche Current IAR -60
Repetitive Avalanche Energya L = 0.1 mH EAR 180 mJ
Power Dissipation TC = 25 (TO-220AB and TO-263) PD 120c W
TA = 25 (TO-263)b 3.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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