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SUB65P06-20

MOSFET 60V 65A 250W

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SeekIC No. : 00165923 Detail

SUB65P06-20: MOSFET 60V 65A 250W

SUB65P06-20 Data Sheet

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Part Number:
SUB65P06-20
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 65 A
Resistance Drain-Source RDS (on) : 20 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263-3 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Package / Case : TO-263-3
Resistance Drain-Source RDS (on) : 20 mOhms
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 65 A


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage VGS ±20
Continuous Drain Currentd
(TJ = 175)		 TC = 25 ID -65 A
TC = 125 -39
Pulsed Drain Current IDM -200
Avalanche Current   IAS -60
Repetitive Avalanche Energya L = 0.1 mH EAS 180 mJ
Power Dissipation TC = 25(TO-220AB and TO-263) PD 250c W
TA = 25bTO-263) 3.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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