MOSFET 40V 75A 250W
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 75 A | ||
| Resistance Drain-Source RDS (on) : | 5.5 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-263-3 | Packaging : | Tube |

| Parameter | Symbol | Limit | Unit | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (TJ = 175) | TC = 25 | ID | 75 | A |
| TC = 125 | 55 | |||
| Pulsed Drain Current | IDM | 240 | ||
| Avalanche Current | IAR | 75 | ||
| Repetitive Avalanche Energy (Duty Cycle 1%) | L = 0.1 mH | EAR | 280 | mJ |
| Maximum Power Dissipation | TC = 25 | PD | 250 | W |
| TA = 25 | 3.7 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 175 | ||