SUB75P03-07

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-263-3
Resistance Drain-Source RDS (on) : 7 mOhms
Continuous Drain Current : 75 A


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current (TJ = 175)	TC = 25	ID	-75a	A
	TC = 125		-65
Pulsed Drain Current		IDM	-240
Avalanche Current		IAR	-60
Repetitive Avalanche Energyb	L = 0.1 mH	EAR	180	mJ
Power Dissipation	TC = 25 (TO-220AB and TO-263)	PD	187d	W
	TA = 25 (TO-263)c		3.75
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 175

Description

The SUB75P03-07 is designed as one kind of P-Channel 30-V (D-S) 175 MOSFET. The absolute maximum ratings of the SUB75P03-07 can be summarized as:(1)Gate-Source Voltage: +/-20 V;(2)Continuous Drain Current (Tc=25): -75 A;(3)Continuous Drain Current (Tc=125): -65 A;(4)Pulsed Drain Current: -240 A;(5)Avalanche Current: -60 A;(6)Repetitive Avalanche Energy: 180 mJ;(7)Power Dissipation (Tc=25, TO-220AB and TO-263): 187 W;(8)Power Dissipation (Tc=25, TO-263): 3.75 W;(9)Operating Junction and Storage Temperature Range:55 to 175 .

The specifications (Tj=25 unless otherwise noted) of the SUB75P03-07 can be summarized as:(1)Drain-Source Breakdown Voltage: -30 V;(2)Gate Threshold Voltage: -1 to -3 V;(3)Gate-Body Leakage: +/- 100 nA;(4)Zero Gate Voltage Drain Current: -1, -50 and -250 uA;(5)On-State Drain Current: -120 A;(6)Forward Transconductance: 20 S. If you want to know more information such as the electrical characteristics about the SUB75P03-07, please download the datasheet in www.seekic.com or www.chinaicmart.com.