SUD25N15-52

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 25 A
Package / Case : TO-252-3
Resistance Drain-Source RDS (on) : 52 mOhms


Features:

`TrenchFET<sup>®</sup>Power MOSFET
`175 Junction Temperature
`PWM Optimized
`100% Rg Tested




Application

·Primary Side Switch




Specifications

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ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	150	V
Gate-Source Voltage		VGS	±20
Continuous Drain Current (TJ = 175)b	TC = 25	ID	25	A
	TC = 125		14.5
Pulsed Drain Current		IDM	50
Continuous Source Current (Diode Conduction)		IS	25
Avalanche Current		IAR	25
Repetitive Avalanche Energy (Duty Cycle 1%)	L = 0.1 mH	EAR	31	mJ
Maximum Power Dissipationa	TC = 25	PD	136b	W
	TA = 25		3a
Operating Junction and Storage Temperature Range		TJ, Tstg	−55 to 175

Description

N-Channel 150V (D-S) 175C MOSFET SUD25N15-52