MOSFET 30V 20A 83W
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 20 A |
| Resistance Drain-Source RDS (on) : | 7 mOhms | Configuration : | Single |
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT |
| Package / Case : | TO-252-3 |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | ||||
|
Parameter |
Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | ||
| Continuous Drain Currenta | TC = 25 | ID | 20 | A |
| TC = 100 | 14 | |||
| Pulsed Drain Current | IDM | 100 | ||
| Continuous Source Current (Diode Conduction)a | IS | 20 | ||
| Maximum Power Dissipation | TC = 25 | PD | 136 | W |
| TA = 25 | 5a | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 | ||