MOSFET 30V 50A 62.5W
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 50 A | ||
| Resistance Drain-Source RDS (on) : | 11 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252-3 | Packaging : | Reel |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | ||||
|
Parameter |
Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | ||
| Continuous Drain Current (TJ = 175)b |
TC = 25 | ID | 50 | A |
| TC = 100 | 37 | |||
| Pulsed Drain Current | IDM | 100 | ||
| Continuous Source Current (Diode Conduction)a | IS | 50 | ||
| Maximum Power Dissipation | TC = 25 | PD | 62.5c | W |
| TA = 25 | 7.5b | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 | ||